A Charge-Accumulation Based High-Performance CMOS Circuit

Document Type : Original Article

Author

Electrical-Engineering Department, Faculty of Engineering, Port Said University, Port Said, Egypt.

Abstract

There is no doubt that complementary metal-oxide semiconductor (CMOS) circuits with wide fan-in suffers from degraded performance. In this paper, a circuit that depends on charge accumulation is proposed as an alternative to conventional CMOS design. The proposed scheme is investigated quantitatively and verified by simulation using predictive technology model (PTM) of the 45 nm CMOS technology with a power-supply voltage, VDD, equal to 1 V. Although the proposed scheme suffers from more sensitivity to process variations compared to static CMOS, the comparative analysis and simulation results confirm the superiority of the proposed scheme from the points of view of speed, area, power consumption, and unity-noise gain. It is verified that the proposed scheme has a smaller area, power consumption, and delay compared to the conventional CMOS design when the number of inputs, n, exceeds four, two, and three, respectively. The impacts of noise, process variations, component mismatches, and technology scaling are also investigated. The proposed scheme showed better performance from the point of view of noise when n exceeds five. The speed advantage gained from the proposed scheme is expected to be more obvious when operating in the subthreshold region. A figure of merit including the unity-noise gain, area, power consumption, and time delay is defined and the proposed scheme showed superior performance compared to the conventional CMOS logic when n exceeds four. Finally, the proposed scheme was compared with various previous schemes.

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Port-Said Engineering Research Journal
Volume 26, Issue 3
September 2022
Pages 93-109

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